BAS16_D87Z【PDF 1/4 页】DIODE ULT FAST 85V 200MA SOT23

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BAS16

?2001 Fairchild Semiconductor Corporation

BAS16, Rev. C

BAS16

Small Signal Diode

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

SOT-23

Connection Diagram

2NC

Absolute Maximum Ratings*

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VRRM

Maximum Repetitive Reverse Voltage 85 V

IF(AV)

Average Rectified Forward Current 200 mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

2.0

Tstg

Storage Temperature Range -55 to +150

°C

Operating Junction Temperature -55 to +150

°C

Thermal Characteristics

Electrical Characteristics

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Power Dissipation 350 mW

RθJA

Thermal Resistance, Junction to Ambient 357

°C/W

Symbol

Parameter

Test Conditions

Min

Max

Units

Breakdown Voltage

IR = 5.0 μA

Forward Voltage I

F = 1.0 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

715

855

1.0

1.25

Reverse Current

VR = 75 V

1.0

μA

VR = 25 V, TA = 150°C

μA

VR = 75 V, TA = 150°C

Total Capacitance

VR = 0,

= 1.0 MHz

2.0

trr

Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,

6.0 ns

RL = 100 ?

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